isolated diode array with hirel mq, mx, mv, and msp screening options www. microsemi . com scottsdale division 1N6100 1N6100 description appearance these low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-pin package for use as steering diodes protecting up to seven i/o ports from esd, eft, or surge by directing them either to the positive side of the power su pply line or to ground (see figure 1). an external tvs diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. they may also be used in fast switching core- driver applications. this includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated- wire memories, etc., as well as decoding or encoding applications. these arrays offe r many advantages of integrated circuits such as high-density packaging and improved reliability. this is a result of fewer pick and place operations, smaller footpr int, smaller weight, and elimination of various discrete packages that may not be as user friendly in pc board mounting. 14-pin ceramic flat pack important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? hermetic ceramic package ? isolated diodes to eliminate cross-talk voltages ? high breakdown voltage v br > 75 v at 5 a ? low leakage i r < 100 na at 40 v ? low capacitance c < 4.0 pf ? switching speeds less than 10 ns ? options for screening in accordance with mil-prf- 19500/474 for jan, jantx, jantxv, and jans are available by adding mq, mx, mv, or msp prefixes respectively to part numbers. for example, designate mx1N6100 for a jantx screen. ? high frequency data lines ? rs-232 & rs-422 interface networks ? ethernet: 10 base t ? computer i/o ports ? lan ? switching core drivers ? iec 61000-4 compatible (see circuit in figure 1) 61000-4-2 (esd): air 15 kv, contact ? 8 kv 61000-4-4 (eft): 40 a ? 5/50 ns 61000-4-5 (surge): 12 a, 8/20 s maximum ratings mechanical and packaging ? reverse breakdown voltage of 75 vdc (note 1 & 2) ? continuous forward current of 300 ma dc (note 1 & 3) ? peak surge current (tp=1/120 s) of 500 ma dc (note 1) ? 400 mw power dissipation per junction @ 25 o c ? 500 mw power dissipation per package @ 25 o c (note 4) ? operating junction temper ature range ?65 to +150 o c ? storage temperature range of ?65 to +200 o c ? 14-pin ceramic flat pack ? weight 0.29 grams (approximate) ? marking: logo, part number, date code and dot identifying pin #1 ? carrier tubes; 19 pcs (standard) note 1: each diode note 2: pulsed: p w = 100 ms max; duty cycle < 20% note 3: derate at 2.4 ma/ o c above +25 o c note 4: derate at 4.0 mw/ o c above +25 o c electrical characteristics (per diode) @ 25 o c unless otherwise specified maximum forward voltage v f1 i f = 100 ma (note 1) maximum reverse current i r1 v r = 40 v maximum reverse current i r2 v r = 20 v maximum capacitance (pin to pin) c t v r = 0 v f = 1 mhz maximum forward recovery time t fr i f = 100 ma maximum reverse recovery time trr i f = i r = 10 madc i rr = 1 madc r l = 100 ohms maximum forward voltage match v f5 i f = 10 ma part number v a na pf ns ns mv 1N6100 1 0.1 25 4.0 15 10 5 note 1: pulsed: p w = 300 s +/- 50 s, duty cycle < 2%, 90 s after leading edge. microsemi scottsdale division page 1 copyright ? 2006 12-13-2006 rev c 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
isolated diode array with hirel mq, mx, mv, and msp screening options www. microsemi . com scottsdale division 1N6100 1N6100 symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current. v f maximum forward voltage: the maximum forward volt age the device will exhibit at a specified current. i r maximum leakage current: the maximum leakage current that will flow at t he specified voltage and temperature. c t capacitance: the capacitance of the tvs as defin ed @ 0 volts at a frequency of 1 mhz and stated in picofarads. schematic package dimensions circuit supply rail (+v cc ) gnd (or -v cc ) steering diode application figure 1 symbol inches millimeters min max min max bl .390 9.91 bw .235 .260 5.97 6.60 ch .045 .095 1.14 2.41 ll .250 .370 6.35 9.40 lo .005 0.13 lo 2 .026 .045 0.66 1.14 ls .050 bsc 1.27 bsc lt .003 .006 0.08 0.15 lu .280 7.11 lw .010 .019 0.25 0.48 i/o port microsemi scottsdale division page 2 copyright ? 2006 12-13-2006 rev c 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
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